BD2311NVX-LB (New)
Single-channel Ultra-Fast Gate Driver for driving GaN Devices
BD2311NVX-LB (New)
Single-channel Ultra-Fast Gate Driver for driving GaN Devices
This product is a rank product for the industrial equipment market. This is the best product for use in these applications. BD2311NVX-LB is a single gate driver capable of driving GaN HEMTs at Ultra-Fast with narrow pulses, which can contribute to the long-range and high accuracy of LiDAR. It can supply 7A output current in a small 6-pin SON package. As a protection function, the driver includes an Undervoltage Lockout(UVLO) between VCC and GND.
Product Detail
Specifications:
Channel
1
Vcc1(Min.)[V]
4.5
Vcc1(Max.)[V]
5.5
I/O Delay Time(Max.)[ns]
Rise=3.4ns(typ)/Fall=3.0ns(typ)
Min. Input Pulse Width[ns]
1.25
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Package Size [mm]
2x2(t=0.6)
Features:
- Gate Driver Voltage Range 4.5V to 5.5V
- Minimum Input Pulse Width 1.25ns (220pF load)
- Typical Rise Time 0.65ns (220pF load)
- Typical Fall Time 0.70ns (220pF load)
- Built-in Undervoltage Lockout (UVLO) between VCC and GND
- Inverting and non-inverting inputs
- Small Package SSON06RX2020
Supporting Information
Overview
BD2311NVX-LB is optimized for GaN devices and achieves gate drive speeds on the order of nanoseconds (ns) - ideal for high-speed GaN switching. This was facilitated through a deep understanding of GaN technology and the continuing pursuit of gate driver performance. The result: fast switching with a minimum gate input pulse width of 1.25ns that contributes to smaller, more energy efficient, higher performance applications.
As GaN devices are sensitive towards gate input overvoltage, ROHM has developed a unique method to suppress the gate voltage overshoots and has implemented it into this driver. On top, the optimum GaN device can be selected by adjusting the gate resistance based on application requirements. ROHM also offers a lineup of GaN devices under the EcoGaN™ name - contributing to a sustainable society through power solutions when combined with gate driver ICs that maximize their performance. The gate driver BD2311NVX-LB with the unique gate overvoltage suppression feature - when used with ROHM's EcoGaN™ products - further simplifies the design and enhances application reliability.
![Minimum Gate Input Pulse Width Characteristics
[BD2311NVX-LB]](/documents/11303/12221729/img2.webp/bd0486c2-0b94-7d99-431d-e76a226c4754?t=1699405246073)
Application Examples
• LiDAR drive circuits (i.e. industrial equipment, infrastructure monitoring)
• DC-DC converter circuits in data centers, base stations etc.
• Wireless charging for portable devices
• Class-D audio Amplifiers and more
Reference Design / Application Evaluation Kit
-
- Reference Design - REFLD002
- Laser Driver Reference Design with GaN HEMT for High-Resolution LiDAR
The range of uses for LiDAR sensors is expanding to include not only autonomous driving, but also applications in the industrial and infrastructure fields. LiDAR sensors are required to have longer sensing distance and higher resolution, and in addition to improving the characteristics of the laser diode, it is necessary to drive the laser diode at higher speeds and power. ROHM offers a lineup of 905nm high power narrow emission width laser diodes. (RLD90QZWx Series) Reference designs are available that includes EcoGAN™, a next-generation device capable of high-speed drive, along with a high-speed gate driver for GaN HEMTs that contribute to improved LiDAR sensor characteristics (distance and resolution) .
- Enables high-speed driving of laser diodes - a key device in LiDAR applications
- Includes next-gen EcoGaN™ devices
- Built-in high-speed gate driver for GaN HEMTs (BD2311NVX-C)
- Two circuit types: square wave and resonant
