# SCS205KGHR - Documentation

Switching loss reduced, enabling high-speed switching . (2-pin package)

### White Paper

 Cutting-Edge Web Simulation Tool “ROHM Solution Simulator” Capable of Complete Circuit Verification of Power Devices and Driver ICs In recent years, the advancing digitization of applications is expanding the number and role of electronic circuits, resulting in a considerable amount of man-hours spent on circuit design, from component selection during application development to board design and evaluation. This document discribes the solution for solving customer issues for each design flow with ROHM's support and tools.

### Application Note

 Part Explanation For SiC Schottky Barrier Diodes Calculation of Power Dissipation in Switching Circuit This application note describes how to calculate the power dissipation that occurs in a SiC MOSFET in a switching circuit with the SiC MOSFET during switching operations. Notes for Temperature Measurement Using Thermocouples This application note explains cautions regarding the temperature measurement. The content of this application note is generally applicable, irrespective of the types of semiconductor devices. Two-Resistor Model for Thermal Simulation This application note explains the two-resistor model, which is the simplest model among thermal models used in thermal simulations. The thermal simulations mentioned three-dimensional model thermal conduction and thermal fluid analysis tools. Notes for Temperature Measurement Using Forward Voltage of PN Junction This application note explains cautions regarding the temperature measurement Using Forward Voltage of PN Junction. The content of this application note is generally applicable, irrespective of the types of semiconductor devices. What is a Thermal Model? (SiC Power Device) Thermal models are models for performing simulations in relation to heat among SPICE models. Simulations using the thermal models are performed to make a rough estimate during the initial stage of thermal design. This application note explains the thermal models. How to Use Thermal Models This application note explains that how to get and use the thermal models, and the simulation method. Method for Monitoring Switching Waveform This application note explains how to correctly monitor the switching waveforms of the power device element such as switching power supply or a motor drive circuit. Application Note for SiC Power Devices and Modules Learn more about silicon carbide and its use in ROHMs SiC Power Devices and Modules. Measurement Method and Usage of Thermal Resistance RthJC This application note describes how to measure and use the junction-to-case thermal resistance of a discrete semiconductor device. Importance of Probe Calibration When Measuring Power: Deskew Even when devices used for measurement are calibrated regularly, they will give incorrect results if calibration is not perfo rmed for the measurement environment. This application note explains the importance of probe calibration in power measurement environments. Impedance Characteristics of Bypass Capacitor This application note focuses on the impedance characteristics of capacitors, and explains cautions for selecting bypass capacitors. Precautions When Measuring the Rear of the Package with a Thermocouple This application note describes precautions when measuring the temperature on the rear of a package using a thermocouple to find the junction temperature of a semiconductor chip during actual operation.