BSM180D12P3C007 - Packaging & Quality

BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.

* This is a standard-grade product.
For Automotive usage, please contact Sales.

Package Information

Inner Structure
 
For BSM180D12P3C007
Taping Information
 
For C Type package

Manufacturing Data

Reliability Test Result
 
For BSM180D12P3C007

Environmental Data

Constitution Materials List
 
For BSM180D12P3C007
Compliance of the ELV directive
 
For SiC Power Module
Report of SVHC under REACH Regulation
 

Export Information

About Export Regulations
 
For SiC Power Module