BSM180D12P3C007 - Packaging & Quality

BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.

* This is a standard-grade product.
For Automotive usage, please contact Sales.

Package Information

Inner Structure
For BSM180D12P3C007
Taping Information
For C Type package

Manufacturing Data

Reliability Test Result
For BSM180D12P3C007

Environmental Data

Constitution Materials List
For BSM180D12P3C007
Compliance of the ELV directive
For SiC Power Module
Report of SVHC under REACH Regulation

Export Information

About Export Regulations
For SiC Power Module