BSM180D12P3C007 - Packaging & Quality
BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
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Package Information
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Inner Structure
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For BSM180D12P3C007
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Taping Information
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For C Type package
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Manufacturing Data
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Reliability Test Result
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For BSM180D12P3C007
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Environmental Data
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Constitution Materials List
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For BSM180D12P3C007
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Compliance of the ELV directive
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For SiC Power Module
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Report of SVHC under REACH Regulation
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Export Information
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About Export Regulations
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For SiC Power Module
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