1200V Nch 4-pin package Silicon-carbide (SiC) MOSFET - SCT3080KR (New)

SCT3080KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. This new series adopts a 4-pin package that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular. As a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).

* This is a standard-grade product.
For Automotive usage, please contact Sales.

User's Guide

P02SCT3040KR-EVK-001 User's Guide
 
This document covers the SiC MOSFET evaluation board (P02SCT3040KR-EVK-001) and its functions.
TO-247-4L Half-Bridge Evaluation Board Product Specification and usage guide.
 
For SiC MOSFET evaluation we are working with fast voltage and current slew rates, thus an appropriate evaluation environment is required. Therefore, ROHM has developed an evaluation board based on the most common circuit configuration known as a half-bridge circuit in order to get obtain appropriate evaluation conditions. In this document note the evaluation board operational guide for the TO-247-4L package.

Application Note

What is a Thermal Model? (SiC Power Device)
 
Thermal models are models for performing simulations in relation to heat among SPICE models. Simulations using the thermal models are performed to make a rough estimate during the initial stage of thermal design. This application note explains the thermal models.
Method for Monitoring Switching Waveform
 
This application note explains how to correctly monitor the switching waveforms of the power device element such as switching power supply or a motor drive circuit.
Precautions during gate-source voltage measurement for SiC MOSFET
 
SiC MOSFET has relatively huge current and voltage change during switching operation, therefore it is needed to measure precisely for surge in between Gate and Source terminal. This application note will explain the precautions, general measurement method, connecting probes, selecting the measurement point and precaution with bridge configuration during the gate - source voltage measurement.
Snubber circuit design methods for SiC MOSFET
 
This application note illustrates a way to design snubber circuit, which is one of the methods to suppress surges voltages and currents.
Improvement of switching loss by driver source
 
This application note shows the influence of the driver source terminal on the switching behavior, and describes the usage precautions.
Application Note for SiC Power Devices and Modules
 
Learn more about silicon carbide and its use in ROHMs SiC Power Devices and Modules.
Gate-source voltage behaviour in a bridge configuration
 
In this application note, we focus on Gate-Source voltage in MOSFET bridge configuration based on one of the simplest power circuits, a synchronous rectification boost converter to understand the switching operation in detail.
Gate-Source Voltage Surge Suppression Methods
 
This application note aims to present the best countermeasures while clarifying the causes of the surge that occurs between gate and source of the MOSFET.
Part Explanation
 
For SiC MOSFET