SCT3080KR - Documentation (New)

SCT3080KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).

A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.

* This is a standard-grade product.
For Automotive usage, please contact Sales.

User's Guide

P02SCT3040KR-EVK-001 User's Guide
This document covers the SiC MOSFET evaluation board (P02SCT3040KR-EVK-001) and its functions.
TO-247-4L Half-Bridge Evaluation Board Product Specification and usage guide.
For SiC MOSFET evaluation we are working with fast voltage and current slew rates, thus an appropriate evaluation environment is required. Therefore, ROHM has developed an evaluation board based on the most common circuit configuration known as a half-bridge circuit in order to get obtain appropriate evaluation conditions. In this document note the evaluation board operational guide for the TO-247-4L package.

Application Note

Notes for Temperature Measurement Using Thermocouples
This application note explains cautions regarding the temperature measurement. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
Two-Resistor Model for Thermal Simulation
This application note explains the two-resistor model, which is the simplest model among thermal models used in thermal simulations. The thermal simulations mentioned three-dimensional model thermal conduction and thermal fluid analysis tools.
Notes for Temperature Measurement Using Forward Voltage of PN Junction
This application note explains cautions regarding the temperature measurement Using Forward Voltage of PN Junction. The content of this application note is generally applicable, irrespective of the types of semiconductor devices.
What is a Thermal Model? (SiC Power Device)
Thermal models are models for performing simulations in relation to heat among SPICE models. Simulations using the thermal models are performed to make a rough estimate during the initial stage of thermal design. This application note explains the thermal models.
How to Use Thermal Models
This application note explains that how to get and use the thermal models, and the simulation method.
Precautions during gate-source voltage measurement for SiC MOSFET
SiC MOSFET has relatively huge current and voltage change during switching operation, therefore it is needed to measure precisely for surge in between Gate and Source terminal. This application note will explain the precautions, general measurement method, connecting probes, selecting the measurement point and precaution with bridge configuration during the gate - source voltage measurement.
Method for Monitoring Switching Waveform
This application note explains how to correctly monitor the switching waveforms of the power device element such as switching power supply or a motor drive circuit.
Snubber circuit design methods for SiC MOSFET
This application note illustrates a way to design snubber circuit, which is one of the methods to suppress surges voltages and currents.
Improvement of switching loss by driver source
This application note shows the influence of the driver source terminal on the switching behavior, and describes the usage precautions.
Application Note for SiC Power Devices and Modules
Learn more about silicon carbide and its use in ROHMs SiC Power Devices and Modules.
Gate-source voltage behaviour in a bridge configuration
In this application note, we focus on Gate-Source voltage in MOSFET bridge configuration based on one of the simplest power circuits, a synchronous rectification boost converter to understand the switching operation in detail.
Gate-Source Voltage Surge Suppression Methods
This application note aims to present the best countermeasures while clarifying the causes of the surge that occurs between gate and source of the MOSFET.
Part Explanation