The HSDIP20 is a SiC-MOSFET module designed to operate with several kW to tens of kW of power. This evaluation kit uses the HSDIP20 for a several kW three-phase inverter.

*This design provides design information only.

This SCZ4009KTAHRC23-EVK-A09 provides detailed specifications for a 3-phase inverter that utilizes Silicon Carbide (SiC) MOSFETs.

The SCZ4009KTAHRC23-EVK-A09 is a reference design platform for evaluating a three-phase inverter system utilizing ROHM's 4th Generation SiC MOSFETs in a DOT-247 package. This evaluation kit includes a power board, gate drive board, and sensing board, offering a comprehensive solution for high-efficiency power conversion applications upto 10kVA. This reference design includes comprehensive design resources such as schematics, bill of materials (BOM), and PCB layout files. It features a reference board built with DOT-247 package SiC MOSFETs, optimized for high-performance three-phase inverter applications.

We encourage to explore the advanced control capabilities of this EVK and consider its integration into your future power electronics development projects.

The product page for SCZ4009KTAHR will be prepared and provided separately.