R6009ENJ
600V 9A TO-263, Low-noise Power MOSFET
R6009ENJ
600V 9A TO-263, Low-noise Power MOSFET
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
TO-263 (D2PAK)
JEITA Package
SC-83
Applications
Power Supply
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
600
Drain Current ID[A]
9
RDS(on)[Ω] VGS=10V(Typ.)
0.5
RDS(on)[Ω] VGS=Drive (Typ.)
0.5
Total gate charge Qg[nC]
23
Power Dissipation (PD)[W]
40
Drive Voltage[V]
10
Trr (Typ.)[ns]
380
Mounting Style
Surface mount
Bare Die Part Number
Available: K7409
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
10.1x13.1 (t=4.7)
Features:
- Low on-resistance
- Fast switching speed
- Gate-source voltage (VGSS) guaranteed to be ±20V
- Drive circuits can be simple
- Parallel use is easy
- Pb-free lead plating ; RoHS compliant
