Models
- RCJ510N25 SPICE Model
- RCJ510N25 Thermal Model (lib)
Characteristics Data
- ESD Data
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Grade
Standard
Package Code
TO-263 (D2PAK)
JEITA Package
SC-83
Package Size[mm]
10.1x13.1 (t=4.5)
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
250
Drain Current ID[A]
51.0
RDS(on)[Ω] VGS=10V(Typ.)
0.048
RDS(on)[Ω] VGS=Drive (Typ.)
0.048
Total gate charge Qg[nC]
120.0
Power Dissipation (PD)[W]
40.0
Drive Voltage[V]
10.0
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150