Why is the recovery time of the body diode in SiC MOSFETs much shorter than in their silicon counterparts?|FAQ|ROHM Semiconductor

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Why is the recovery time of the body diode in SiC MOSFETs much shorter than in their silicon counterparts?
- Body diodes in SiC MOSFETs that consist of a pn junction feature a shorter minority carrier lifetime.
  This makes it difficult to see the accumulation effect of the minority carriers, enabling ultra-high-speed recovery performance (tens of ns) equivalent to SBDs.
  Also, the recovery time is constant and independent of forward injection current - similar to SBDs (if dI/dt is constant).