ROHM News Detail

ROHM Introduces a New MOSFET for AI Servers with Industry-Leading* SOA Performance and Low ON-Resistance
Endorsed by a major global cloud platform provider

*ROHM July 1st, 2025 study on existing 8080-size 100V power MOSFETs

July 1st, 2025

RY7P250BM Press picture

ROHM has released of a 100V power MOSFET - RY7P250BM - optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection to the market.

As AI technology rapidly advances, data centers are facing unprecedented processing demands and server power consumption continues to increase annually. In particular, the growing use of generative AI and high-performance GPUs has created a need to simultaneously improve power efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V systems to more efficient 48V power architectures. Furthermore, in hot-swap circuits used to safely replace modules while servers remain powered on, MOSFETs are required that offer both wide SOA (Safe Operating Area) and low ON-resistance to protect against inrush current and overloads.

The RY7P250BM delivers these critical characteristics in a compact 8080-size package, helping to reduce power loss and cooling requirements in data centers while improving overall server reliability and energy efficiency. As the demand for 8080-size MOSFETs grows, this new product provides a drop-in replacement for existing designs. Notably, the RY7P250BM achieves wide SOA (VDS=48V, Pw=1ms/10ms) ideal for hot-swap operation. Power loss and heat generation are also minimized with an industry-leading low ON-resistance of 1.86mΩ (VGS=10V, ID=50A, Tj=25°C), approximately 18% lower than the typical 2.28mΩ of existing wide SOA 100V MOSFETs in the same size.

SOA Performance Comparison

Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents. The RY7P250BM meets this demand, achieving 16A at 10ms and 50A at 1ms, enabling support for high-load conditions conventional MOSFETs struggle to handle.

ROHM’s new product has also been certified as a recommended component by leading global cloud platform provider, where it is expected to gain widespread adoption in next-generation AI servers. Especially in server applications where reliability and energy efficiency are mission-critical, the combination of wide SOA and low RDS(on) has been highly evaluated for cloud infrastructure.

Going forward, ROHM will continue to expand its lineup of 48V-compatible power solutions for servers and industrial equipment, contributing to the development of sustainable ICT infrastructure and greater energy savings through high-efficiency, high-reliability products.

Key Specifications

Part No. Data
Sheet		 Polarity VDSS
[V]		 IDSL
[A]		 RDS(on)
Max.
[mΩ]
(VGS=
10V)		 Ciss
[pF]		 Qg
[nC]
(VGS=
10V)		 SOA Drain Current
Tolerance
(VDS=48V)
[A]		 Package
[mm]
Pw=
10ms		 Pw=
1ms
New
RY7P250BM		 PDF N-
channel		 100 300 1.86 11300 170 16 50 DFN8080-8S Package
DFN8080-8S
(8.0×8.0×1.0)

Application Examples

• 48V AI server systems and power supply hot-swap circuits in data centers
• 48V industrial equipment power systems (i.e. forklifts, power tools, robots, fan motors)
• Battery-powered industrial equipment such as AGVs (Automated Guided Vehicles)
• UPS and emergency power systems (battery backup units)

Online Sales Information

Sales Launch Date: May 2025
Pricing: $5.50/unit (samples, excluding tax)
Online Distributors: DigiKey™, Mouser™ and Farnell™
The products will be offered at other online distributors as they become available.
Applicable Part No: RY7P250BM

Online Distributors

  • DigiKey
  • Mouser
  • Farnell

EcoMOS™ Brand

EcoMOS™ is ROHM's brand of silicon MOSFETs designed for energy-efficient applications in the power device sector.
Widely utilized in applications such as home appliances, industrial equipment, and automotive systems, EcoMOS™ provides a diverse lineup that enables product selection based on key parameters such as noise performance and switching characteristics to meet specific requirements.

EcoMOS™

EcoMOS™ is a trademark or registered trademark of ROHM Co., Ltd.

Terminology

Hot-Swap Circuit
A circuit that enables components to be inserted or removed while the system remains powered on.
It typically consists of MOSFETs, protection elements, and connectors, and is responsible for suppressing inrush current and protecting against overcurrent conditions, ensuring stable operation of the system and connected components.
Hot-Swap Circuit Diagram
Power MOSFET
A MOSFET designed for power conversion and switching applications. N-channel MOSFETs are the dominant type, turning on when a positive voltage is applied to the gate relative to the source. They offer lower ON-resistance and higher efficiency than P-channel variants. Due to their low conduction loss and high-speed switching performance, power MOSFETs are commonly used in power supplies, motor drives, and inverter circuits.
SOA (Safe Operating Area)
The defined range of voltage and current in which a device can operate reliably without risk of failure. Operating outside this boundary may result in thermal runaway or permanent damage. SOA is especially critical in applications exposed to inrush currents or overcurrent conditions.
Low ON-resistance (RDS(on))
The resistance value between the Drain and Source of a MOSFET during operation. A smaller RDS(on) reduces power loss during operation.
Inrush Current
A sudden surge of current that momentarily exceeds the rated value when an electronic device is powered on. Proper control of this current reduces stress on power circuit components, helping to prevent device damage and stabilize the system.

Note: DigiKey™ Mouser™ and Farnell™ are trademarks or registered trademarks of their respective companies.

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