Dual Active Bridge Converter (DAB)
Description
This converter has bridges on the primary and secondary sides of the transformer. It performs bi-directional power conversion by controlling the phase between the reference phase (primary side bridge) and the control phase (secondary side bridge). ZVS is possible, and it is popular for power supply of high-voltage, high-power storage systems such as EV and power conditioners.
Overview
- Support Bi-directional operation
- SiC MOSFET contribute high efficiency
- Output voltage may be changed depending on battery voltage
- By stacking DAB circuits, it is possible to support more higher voltage
Circuit
Key Products
| Product Category | Product family | Product Number | Feature |
|---|---|---|---|
| Transistor (Primary side) | 1200V SiC MOSFET | SCT4xxxKx series NEW | The latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 1200V withstand voltage, ideal for higher voltage applications. |
| SCT3xxxKx series | 1200V SiC MOSFET with high voltage torelance and low power dissipation. | ||
| SiC Power module | BSMxxD12/D17Pxx | 1200V/1700V SiC Power module with Half bridge topology | |
| Transistor (Secondary side) | 750V SiC MOSFET | SCT4xxxDx series NEW | The latest SiC MOSFET device. Enhanced low on-resistance enable best in class performance. It supports 750 V withstand voltage, ensuring a higher operating margin than conventional products, and can be used safely. |
| 650V SiC MOSFET | SCT3xxxAx series | Trench-gate SiC MOSFET with low on-resistance (50% reduction) compared to conventional products | |
| SiC Power module | BSMxxD12/D17Pxx | 1200V/1700V SiC Power module with Half bridge topology | |
| Gate Driver | 3750V voltage tolerance | BM61x4xRFV | 1ch configuration, 3,750Vrms isolated type Gate Driver, can be used for switching devices with current source pins. |
Simulation
Coming soon