ROHM’s SCT Series of 3rd-generation trench-gate type SiC MOSFETs are available 6 variants (650V/1200V). Features include approx. 50% lower ON-resistance than 2nd-generation planar types, making them ideal for large server power supplies, UPS systems, solar power converters, and electric vehicle charging stations requiring high efficiency.
A 4-pin package (TO-247-4L) is offered that maximizes switching performance and reduces switching loss by up to 35% over conventional 3-pin package types, contributing to lower power consumption in a variety of applications.
Coming Soon: 4th Generation SiC MOSFETs
ROHM will soon release its 4th generation MOSFETs utilizing an improved trench structure to deliver the industry’s lowest ON resistance while achieving low switching loss by significantly reducing parasitic capacitance.
Combine our SiC MOSFETs with our proprietary galvanically isolated gate drivers (BM6021x, BM61xx) specifically designed to drive SiC by integrating advanced features such as active Miller clamping, providing the ideal solution for applications requiring greater efficiency and switching speeds to improve performance while reducing both size and weight.
ROHM IPMs (Intelligent Power Modules) integrate all components required for control, including the power device control IC and peripheral circuitry, into a single package. Both IGBT and MOS types are available, ideal for a variety of applications, including large home appliances, renewable energy, fans, and industrial motor drives, making the design process less complicated and improving system efficiency.
ROHM's GMR series of high power low ohmic shunt resistors combine high reliability with high power handling capability – ideal for industrial applications.