ROHM Parametric

Field Stop Trench IGBT

ROHM Semiconductor offers a full range of automotive-grade field stop trench IGBTs that allows users to select the ideal product based on set requirements. Original trench-gate and thin-wafer technologies are utilized to achieve low VCE(sat) with reduced switching loss.

As such they contribute to greater efficiency and increased energy savings in a variety of high-voltage, high-current applications.

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Series: Feature

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Switching Frequency
Short Circuit Withstand Time/TCS (Min.)[µs]
High
Low
0 2 5 8~10
RGW, RGWS : 650V

OBC, Totem-Pole PFC,Converter, UPS, Welding, PV Inverter, Current resonance(IH)

RGTV : 650V

UPS, Welding,PV Inverter, Current resonance(IH)

RGTH : 650V

High speed SW

RGE : 650V

Motor Drive, General Inverter

RGCL : 650V

Partial PFC, Brake, Discharge Circuit

RGT : 650V

Motor Drive, General Inverter

RGA : 1200V

E-comp, Heater, Relay-circuit, OBC (For Rectification)

RGC : 1800V

Voltage resonance (IH, Micro-wave)

RGS : 650, 1200V

RGS : 650,1200V E-comp, Heater, Relay-circuit, OBC (For Rectification)

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