4.5V Drive Nch MOSFET - RF4E080BN | ROHM Semiconductor - ROHM Co., Ltd.
4.5V Drive Nch MOSFET - RF4E080BN
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Number of terminal
Drain-Source Voltage VDSS[V]
Drain Current ID[A]
RDS(on)[Ω] VGS=4.5V (Typ.)
RDS(on)[Ω] VGS=10V (Typ.)
RDS(on)[Ω] VGS=Drive (Typ.)
Total gate charge Qg[nC]
Power Dissipation (PD)[W]
Storage Temperature (Min.)[°C]
Storage Temperature (Max.)[°C]
Features:・ Low on - resistance.
・ High Power Small Mold Package (HUML2020L8).
・ Pb-free lead plating ; RoHS compliant
・ Halogen Free