10V Drive Nch MOSFET - R6020ENZ1 | ROHM Semiconductor - ROHM Co., Ltd.
Rohm Productdetail
10V Drive Nch MOSFET - R6020ENZ1
R6020ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance .
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
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Specifications:
Grade
Standard
Package Code
TO-247
Package Size[mm]
21.07x15.94(t=5.02)
Applications
Power Supply
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
600
Drain Current ID[A]
20.0
RDS(on)[Ω] VGS=10V (Typ.)
0.17
RDS(on)[Ω] VGS=Drive (Typ.)
0.17
Total gate charge Qg[nC]
60.0
Power Dissipation (PD)[W]
120.0
Drive Voltage[V]
10.0
Mounting Style
Leaded type
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Features:
1) Low on-resistance.2) Fast switching speed.
3) Gate-source voltage(VGSS)guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
6) Pb-free lead plating; RoHS compliant.