R6009ENJ
600V 9A TO-263, Low-noise Power MOSFET

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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Product Detail

 
Part Number | R6009ENJTL
Status | Active
Package | LPTS (D2PAK)
Packing Type | Taping
Unit Quantity | 1000
Minimum Package Quantity | 1000
RoHS | Yes

Specifications:

Package Code

TO-263 (D2PAK)

JEITA Package

SC-83

Applications

Power Supply

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

600

Drain Current ID[A]

9

RDS(on)[Ω] VGS=10V(Typ.)

0.5

RDS(on)[Ω] VGS=Drive (Typ.)

0.5

Total gate charge Qg[nC]

23

Power Dissipation (PD)[W]

40

Drive Voltage[V]

10

Trr (Typ.)[ns]

380

Mounting Style

Surface mount

Bare Die Part Number

Available: K7409

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Package Size [mm]

10.1x13.1 (t=4.7)

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Features:

  • Low on-resistance
  • Fast switching speed
  • Gate-source voltage (VGSS) guaranteed to be ±20V
  • Drive circuits can be simple
  • Parallel use is easy
  • Pb-free lead plating ; RoHS compliant
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