GNE1015TB (Under Development)
EcoGaN™, 150V 15A DFN5060, E-mode Gallium-Nitride(GaN) HEMT
GNE1015TB (Under Development)
EcoGaN™, 150V 15A DFN5060, E-mode Gallium-Nitride(GaN) HEMT
GNE1015TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high frequency band of 1MHz. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
VDS [V]
150
IDS [A]
15
VGS Rating [V]
8
RDS(on) [mΩ]
15
Qg [nC]
4.9
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
5.0x6.0 (t=1.0)
Features:
- E-mode
- Reliable and easy to use with DFN package
- High gate voltage maximum rating 8V
- Very high switching frequency
Reference Design / Application Evaluation Kit
-
- Reference Design - REFPDT006
- Industry 48V, 400W Isolated DC-DC Converter with EcoGaN™
These are 48V isolated DC/DC converter reference design equipped with EcoGaN™, a next-generation device that is expected to greatly contribute to energy saving and miniaturization of equipments. Taking advantage of EcoGaN™'s device features, it is driven at high-speed switching frequencies (~500 kHz) , resulting in smaller transformers and inductors and lower capacitance.
- Full-Bridge Isolated Step Down DC-DC Converter
- High speed switching EcoGaN™
- High speed Gate Driver for GaN HEMT
- Isolated DC/DC Controller
- Smaller components area compared with Si MOSFET based solution
