GNE1015TB (Under Development)EcoGaN™, 150V 15A DFN5060, E-mode Gallium-Nitride(GaN) HEMT
GNE1015TB (Under Development)
EcoGaN™, 150V 15A DFN5060, E-mode Gallium-Nitride(GaN) HEMT
GNE1015TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high frequency band of 1MHz. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting.
For Automotive usage, please contact Sales.
- Reliable and easy to use with DFN package
- High gate voltage maximum rating 8V
- Very high switching frequency
Reference Design / Application Evaluation Kit
- Reference Design - REFPDT006
- Industry 48V, 400W Isolated DC-DC Converter with EcoGaN™
These are 48V isolated DC/DC converter reference design equipped with EcoGaN™, a next-generation device that is expected to greatly contribute to energy saving and miniaturization of equipments. Taking advantage of EcoGaN™'s device features, it is driven at high-speed switching frequencies (~500 kHz) , resulting in smaller transformers and inductors and lower capacitance.
- Full-Bridge Isolated Step Down DC-DC Converter
- High speed switching EcoGaN™
- High speed Gate Driver for GaN HEMT
- Isolated DC/DC Controller
- Smaller components area compared with Si MOSFET based solution