GNE1015TB (Under Development)
EcoGaN™, 150V 15A DFN5060, E-mode Gallium-Nitride(GaN) HEMT

GNE1015TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high frequency band of 1MHz. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting.

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Product Detail

Part Number | GNE1015TB
Package | DFN5060
Unit Quantity | 2500
Minimum Package Quantity | 2500
Packing Type | Taping
RoHS | Yes






VGS Rating [V]


RDS(on) [mΩ]


Qg [nC]


Storage Temperature (Min.)[°C]


Storage Temperature (Max.)[°C]


Dimensions [mm]

5.0x6.0 (t=1.0)

Find Similar


  • E-mode
  • Reliable and easy to use with DFN package
  • High gate voltage maximum rating 8V
  • Very high switching frequency

Reference Design / Application Evaluation Kit

    • Reference Design - REFPDT006
    • Industry 48V, 400W Isolated DC-DC Converter with EcoGaN™
    • These are 48V isolated DC/DC converter reference design equipped with EcoGaN™, a next-generation device that is expected to greatly contribute to energy saving and miniaturization of equipments. Taking advantage of EcoGaN™'s device features, it is driven at high-speed switching frequencies (~500 kHz) , resulting in smaller transformers and inductors and lower capacitance.

      • Full-Bridge Isolated Step Down DC-DC Converter
      • High speed switching EcoGaN™
      • High speed Gate Driver for GaN HEMT
      • Isolated DC/DC Controller
      • Smaller components area compared with Si MOSFET based solution