GNE1007TB (Under Development)
EcoGaN™, 150V 20A DFN5060, E-mode Gallium-Nitride(GaN) HEMT
GNE1007TB
GNE1007TB (Under Development)
EcoGaN™, 150V 20A DFN5060, E-mode Gallium-Nitride(GaN) HEMT
GNE1007TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high frequency band of 1MHz. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting.
Sample
* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Sample
Product Detail
Part Number | GNE1007TB
Status |
Under Development
Package |
DFN5060
Unit Quantity | 2500
Minimum Package Quantity | 2500
Packing Type | Taping
RoHS |
Yes
Specifications:
VDS [V]
150
IDS [A]
20
VGS Rating [V]
8
RDS(on) [mΩ]
7
Qg [nC]
10.2
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Dimensions [mm]
5.0x6.0 (t=1.0)
Features:
- E-mode
- Reliable and easy to use with DFN package
- High gate voltage maximum rating 8V
- Very high switching frequency
