Provides high accuracy and ultra-low consumption, highly reliable, energy-saving voltage monitoring for automotive and industrial equipment requiring functional safety.
Power Electronics News by Maurizio Di Paolo Emilio Based on the successful implementation of their double-trench structure design, ROHM has just created its 4th generation SiC MOSFETs.
Compact and High Power Conversion Efficiency Barrier Diodes ROHM has developed the RBLQ Series, enabling industry-leading low V
F and low capacitance characteristics.
