BSM180D12P2E002
SiC（碳化矽）功率模組

本品是使用ROHM生產的SiC-DMOSFET和SiC蕭特基二極體的斬波結構的SiC MOSFET模組。

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* 本產品是標準級的產品。
本產品不建議使用的車載設備。
Data Sheet 購買 *

Product Detail

 
料號 | BSM180D12P2E002
狀態 | 推薦品
封裝 | E
單位數量 | 4
最小包裝數量 | 4
包裝形式 | Corrugated Cardboard
RoHS | Yes

規格:

Drain-source Voltage[V]

1200

Drain Current[A]

204

Total Power Dissipation[W]

1360

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

152x57.95 (t=18)

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功能:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD2G12D24-EVK001

    • This evaluation board, BSMGD2G12D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module

    • User Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

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