BSM180D12P3C007
SiC 파워 모듈

로옴의 SiC-UMOSFET를 사용한 Half bridge 구성의 SiC MOSFET 모듈입니다.

Data Sheet 구입 *
* 본 제품은 STANDARD GRADE 제품입니다.
이 제품은 차재 기기의 사용을 권장하지 않습니다.
Data Sheet 구입 *

Product Detail

 
형명 | BSM180D12P3C007
상태 | 추천품
패키지 | C
포장 수량 | 12
최소 포장 단위 | 12
포장 사양 | Corrugated Cardboard
RoHS | Yes

사양 :

Drain-source Voltage[V]

1200

Drain Current[A]

180

Total Power Dissipation[W]

880

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

122x45.6 (t=17.5)

Find Similar

특징 :

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3C12D24-EVK001

    • This evaluation board, BSMGD3C12D24-EVK001, is a gate driver board for full SiC Modules in C type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User Guide
    • Snubber Module - MGSM1D72J2-145MH26

    • Snubber Module for BSM series (1200V, C type)

X

Most Viewed