Silicon-carbide (SiC) Support Page

Evaluation boards make it easy to evaluate ROHMs broad portfolio of SiC Schottky barrier diodes (SBD's), SiC MOSFET's, full SiC power modules (which integrate SiC SBDs and MOSFETs), and high heat resistance power modules.

These compact and efficient semiconductor devices have the potential to substantially reduce end-product size, and when coupled with an evaluation board, can also be used to help prototype applications and initiate set development.

Evaluation Board Lineup

Category SiC Product  Image Part No. Maker Product Details  User Guide Purchase Board
SiC-MOS  Evaluation
Board
SCT4XXX series Trench(4th Generation) TO-247-N NEW
P04SCT4018KE-EVK-001
ROHM Details User Guide
Product Specification
Online Distributors
SCT4XXX series Trench(4th Generation) TO-247-4L NEW
P05SCT4018KR-EVK-001
Online Distributors
SCT3XXX series Trench(3G) TO-247 3L/4L P02SCT3040KR-EVK-001  Details User Guide
Product Specification
Online Distributors
SiC Module Drive board  BSM series Planar (2G)(1200V, E / G type)  BSMGD2G12D24-EVK001  - User Guide Inquire
BSM series Trench(3G/4G) (1200V,E/G type) BSMGD3G12D24-EVK001 - User Guide Inquire
BSM series (1200V,C type) BSMGD3C12D24-EVK001 - User Guide Inquire
BSM series (1700V,E type) BSMGD2G17D24-EVK001   User Guide Inquire
BSM series (1200V,1700V E/G type) 2EG-B series TAMURA  Tamura Manufacturing’s Website
Snubber Module  BSM series (1200V, C type)  MGSM1D72J2-145MH26  ROHM - Inquire
BSM series (1200V,  E / G type)  MGSM1D72J2-145MH16  -
BSM250 (1700V,  E type)  MGSM1D72J3-934MH93 -
AC/DC  Evaluation Board SCT2H12NZ BD7682FJ-LB-EVK-402 ROHM Details Application Note Online Distributors

Evaluation Board Overview

P04SCT4018KE-EVK-001/P05SCT4018KR-EVK-001

P04SCT4018KE-EVK-001 / P05SCT4018KR-EVK-001 are evaluation boards that enable evaluation of 4th generation SiC MOSFETs in TO-247N / TO-247-4L packages. It is equipped with a gate driver and peripheral circuits to reduce man-hours for design and evaluation.

Product image

P02SCT3040KR-EVK-001

  • For evaluating ROHM’s SCT3040KR (1200V/40mΩ/TO-247-4L)
    Enables evaluation of other ROHM SiC MOSFETs by simply changing the circuit multiplier
  • In addition to the TO-247-4L package, there are through-holes for TO-247-3L that make it possible to perform comparative evaluations on the same board
  • Single power supply (+12V operation)
  • Supports double pulse testing up to 150A and switching up to 500kHz
  • Compatible with a variety of power supply topologies (Buck/Boost/Half Bridge)
  • Built-in isolated power supply for gate drive adjustable via variable resistor (+12V to +23V)
  • Jumper pins enable switching between negative bias/zero bias for gate drive
  • Includes overcurrent protection (DESAT, OCP) along with a function for preventing simultaneous ON of both upper and lower arms

 

P02SCT3040KR-EVK-001

AC/DC Converter Control IC Evaluation Board with Built-In 1700V SiC MOSFET

Optimized for use with auxiliary power supplies in high-power industrial equipment, this evaluation board integrates ROHM’s AC/DC converter control IC for SiC drive and 1700V SiC MOSFET.

BD7682FJ-LB-EVK-402

  • AC/DC evaluation board with SiC MOSFET drive (flyback converter)
  • Incorporates ROHM's SCT2H12NZ 1700V SiC MOSFET
  • Includes ROHM's BD7682FJ-LB AC/DC converter control IC
  • 3-phase 400 to 690VAC input, 24V/1A output

 

BD7682FJ-LB-EVK-402

Application Note

Basics and Design Guidelines for Gate Drive Circuits
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Two-Resistor Model for Thermal Simulation
Two-Resistor Model for Thermal Simulation
Method for Monitoring Switching Waveform
Method for Monitoring Switching Waveform
How to Use Thermal Models
How to Use Thermal Models
What is a Thermal Model?
What is a Thermal Model?
Precautions During Gate-Source Voltage Measurement
Precautions During Gate-Source Voltage Measurement
Improving Switching Loss by Driver Source
Improving Switching Loss by Driver Source
Snubber Circuit Design Methods for SiC MOSFETs
Snubber Circuit Design Methods for SiC MOSFETs
Gate-Source Voltage Surge Suppression Methods
Gate-Source Voltage Surge Suppression Methods
Gate-Source Voltage Behavior in a Bridge Configuration
Gate-Source Voltage Behavior in a Bridge Configuration

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