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2.5V Drive Nch+Pch MOSFET - US6M2

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | US6M2TR
Status | Active
Package | TUMT6
Unit Quantity | 3000
Minimum Package Quantity | 3000
Packing Type | Taping
RoHS | Yes

Specifications:

Grade

Standard

Package Code

SOT-363T

JEITA Package

SC-113DA

Package Size[mm]

2.0x2.1(t=0.85max.)

Number of terminal

6

Polarity

Nch+Pch

Drain-Source Voltage VDSS[V]

30

Drain Current ID[A]

1.5

RDS(on)[Ω] VGS=2.5V (Typ.)

0.24

RDS(on)[Ω] VGS=4V (Typ.)

0.18

RDS(on)[Ω] VGS=Drive (Typ.)

0.24

Total gate charge Qg[nC]

1.6

Power Dissipation (PD)[W]

1.0

Drive Voltage[V]

2.5

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Features:

· 2.5V-drive type
· Nch+Pch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant