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4V Drive Nch+SBD MOSFET - US5U2

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | US5U2TR
Status | Active
Package | TUMT5
Unit Quantity | 3000
Minimum Package Quantity | 3000
Packing Type | Taping
RoHS | Yes

Specifications:

Grade

Standard

Package Code

SOT-353T

JEITA Package

SC-113CA

Package Size[mm]

2.0x2.1(t=0.85Max.)

Number of terminal

5

Polarity

Nch+Schottky

Drain-Source Voltage VDSS[V]

30

Drain Current ID[A]

1.4

RDS(on)[Ω] VGS=4V (Typ.)

0.27

RDS(on)[Ω] VGS=4.5V (Typ.)

0.25

RDS(on)[Ω] VGS=10V (Typ.)

0.17

RDS(on)[Ω] VGS=Drive (Typ.)

0.27

Total gate charge Qg[nC]

1.4

Power Dissipation (PD)[W]

0.7

Drive Voltage[V]

4.0

Reverse voltage VR (Diode) [V]

20.0

Forward Current IF (Diode) [A]

0.5

Forward Current Surge Peak IFSM (Diode) [A]

2.0

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Features:

· Multiple Schottky Barrier Diodes Middle Power MOSFET
· Small Surface Mount Package
· Pb Free/RoHS Compliant