UM6J1N
4V Drive Pch+Pch MOSFET
UM6J1N
UM6J1N
4V Drive Pch+Pch MOSFET
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
SOT-363
JEITA Package
SC-88
Number of terminal
6
Polarity
Pch+Pch
Drain-Source Voltage VDSS[V]
-30
Drain Current ID[A]
-0.2
RDS(on)[Ω] VGS=4V(Typ.)
1.6
RDS(on)[Ω] VGS=4.5V(Typ.)
1.4
RDS(on)[Ω] VGS=10V(Typ.)
0.9
RDS(on)[Ω] VGS=Drive (Typ.)
1.6
Power Dissipation (PD)[W]
0.15
Drive Voltage[V]
-4
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
2x2.1 (t=1)
Features:
· 4Ｖ-drive type· Pch+Pch Small-signal MOSFET
· Small Surface Mount Package
· Pb Free/RoHS Compliant
