R6509ENJ
650V 9A TO-263, Low-noise Power MOSFET
R6509ENJ
R6509ENJ
650V 9A TO-263, Low-noise Power MOSFET
R6509ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
TO-263 (D2PAK)
JEITA Package
SC-83
Applications
Power Supply
Number of terminal
3
Polarity
Nch
Drain-Source Voltage VDSS[V]
650
Drain Current ID[A]
9
RDS(on)[Ω] VGS=10V(Typ.)
0.53
RDS(on)[Ω] VGS=Drive (Typ.)
0.53
Total gate charge Qg[nC]
24
Power Dissipation (PD)[W]
94
Drive Voltage[V]
10
Trr (Typ.)[ns]
400
Mounting Style
Surface mount
Bare Die Part Number
Available: K7459
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
10.1x13.1 (t=4.7)
Features:
- Low on-resistance
- Fast switching speed
- Parallel use is easy
- Pb-free plating ; RoHS compliant
