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Nch 600V 11A Power MOSFET - R6011ENJ

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | R6011ENJTL
Status | Active
Package | LPTS(D2PAK)
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS | Yes

Specifications:

Grade

Standard

Package Code

TO-263(D2PAK)

JEITA Package

SC-83

Package Size[mm]

10.1x13.1(t=4.5)

Applications

Power Supply

Number of terminal

3

Polarity

Nch

Drain-Source Voltage VDSS[V]

600

Drain Current ID[A]

11.0

RDS(on)[Ω] VGS=10V (Typ.)

0.34

RDS(on)[Ω] VGS=Drive (Typ.)

0.34

Total gate charge Qg[nC]

32.0

Power Dissipation (PD)[W]

40.0

Drive Voltage[V]

10.0

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Features:

・ Low on-resistance.
・ Fast switching speed.
・ Gate-source voltage (VGSS) guaranteed to be ±20V.
・ Drive circuits can be simple.
・ Parallel use is easy.
・ Pb-free lead plating ; RoHS compliant