10V Drive Nch MOSFET - R6007ENX | ROHM Semiconductor - ROHM Co., Ltd. - global
10V Drive Nch MOSFET - R6007ENX
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Number of terminal
Drain-Source Voltage VDSS[V]
Drain Current ID[A]
RDS(on)[Ω] VGS=10V (Typ.)
RDS(on)[Ω] VGS=Drive (Typ.)
Total gate charge Qg[nC]
Power Dissipation (PD)[W]
Storage Temperature (Min.)[°C]
Storage Temperature (Max.)[°C]
Features:・ Low on-resistance.
・ Fast switching speed.
・ Gate-source voltage (VGSS) guaranteed to be ±20V.
・ Drive circuits can be simple.
・ Parallel use is easy.
・ Pb-free lead plating ; RoHS compliant