QS8K11
4V Drive Nch+Nch MOSFET
QS8K11
QS8K11
4V Drive Nch+Nch MOSFET
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
TSMT8
Applications
Switching
Number of terminal
8
Polarity
Nch+Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
3.5
RDS(on)[Ω] VGS=4V(Typ.)
0.05
RDS(on)[Ω] VGS=4.5V(Typ.)
0.045
RDS(on)[Ω] VGS=10V(Typ.)
0.035
RDS(on)[Ω] VGS=Drive (Typ.)
0.05
Total gate charge Qg[nC]
3.3
Power Dissipation (PD)[W]
1.5
Drive Voltage[V]
4
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
3x2.8 (t=0.85)
Features:
· 4Ｖ-drive type· Nch+Nch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant
