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4V Drive Nch+Nch MOSFET - QS8K11

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number | QS8K11TCR
Status | Active
Package | TSMT8
Unit Quantity | 3000
Minimum Package Quantity | 3000
Packing Type | Taping
RoHS | Yes

Specifications:

Grade

Standard

Package Code

TSMT8

Package Size[mm]

3.0x2.8(t=0.8)

Applications

Switching

Number of terminal

8

Polarity

Nch+Nch

Drain-Source Voltage VDSS[V]

30

Drain Current ID[A]

3.5

RDS(on)[Ω] VGS=4V (Typ.)

0.05

RDS(on)[Ω] VGS=4.5V (Typ.)

0.045

RDS(on)[Ω] VGS=10V (Typ.)

0.035

RDS(on)[Ω] VGS=Drive (Typ.)

0.05

Total gate charge Qg[nC]

3.3

Power Dissipation (PD)[W]

1.5

Mounting Style

Surface mount

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Features:

· 4V-drive type
· Nch+Nch Middle-power MOSFET
· Fast Switching Speed
· Small Surface Mount Package
· Pb Free/RoHS Compliant