BSM250D17P2E004

1700V, 250A, Half bridge, Silicon-carbide (SiC) Power Module
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BSM250D17P2E004

BSM250D17P2E004
1700V, 250A, Half bridge, Silicon-carbide (SiC) Power Module

BSM250D17P2E004 is a half bridge module consisting of SiC-DMOSFET and SiC-SBD, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.
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Product Detail

 
Part Number | BSM250D17P2E004
Status | Recommended
Package | E
Unit Quantity | 4
Minimum Package Quantity | 4
Packing Type | Corrugated Cardboard
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1700

Drain Current[A]

250

Total Power Dissipation[W]

1800

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Half bridge

Package Size [mm]

152x57.95 (t=18)

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Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD2G17D24-EVK001

    • This evaluation board, BSMGD2G17D24-EVK001, is a gate driver board for full SiC Modules with the 2nd Generation 1700V SiC-MOSFET in E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User Guide
    • Snubber Module - MGSM1D72J3-934MH93

    • Snubber Module for BSM250 (1700V,E type)

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