SCT3060AW7
650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3060AW7
SCT3060AW7
650V 38A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3060AW7 is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Part Number | SCT3060AW7TL
Status |
Recommended
Package |
TO-263-7L
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS |
Yes
Specifications:
Drain-source Voltage[V]
650
Drain-source On-state Resistance(Typ.)[mΩ]
60
Generation
3rd Gen (Trench)
Drain Current[A]
38
Total Power Dissipation[W]
159
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
10.2x15.4 (t=4.7)
Features:
- Low on-resistance
- Fast switching speed
- Fast reverse recovery
- Easy to parallel
- Simple to drive
- Pb-free lead plating ; RoHS compliant