BM60213FV-C
1200 V High Voltage High and Low Side Driver
BM60213FV-C
1200 V High Voltage High and Low Side Driver
The BM60213FV-C is high and low side drive IC which operates up to 1200 V with bootstrap operation, which can drive N-channel power MOSFET and IGBT. Under-voltage Lockout (UVLO) function is built-in.
Product Detail
Functional Safety:
Specifications:
Channel
2
High-side floating supply voltage [V]
1200
Turn-on/off time (Typ.) [ns]
75
Vcc(Min.)[V]
10
Vcc(Max.)[V]
24
Operating Temperature (Min.)[°C]
-40
Operating Temperature (Max.)[°C]
125
Package Size [mm]
6.5x8.1 (t=2.01)
Common Standard
AEC-Q100 (Automotive Grade)
Features:
- AEC-Q100 Qualified(Grade 1)
- High-Side Floating Supply Voltage 1200 V
- Under Voltage Lockout Function
- 3.3 V and 5.0 V Input Logic Compatible
Reference Design / Application Evaluation Kit
-
- Evaluation Board - BM60213FV-EVK001
The BM60213FV-EVK001 board can be driving IGBT Power Devices for High-side and Low-side on Half-Bridge application. The BM60213FV-C has Power Supply protections which are the Under-Voltage Lockout (UVLO) function at VCCA and VCCB. The BM60213FV-EVK001 allows designers to evaluate Rohm’s Gate Driver family for various applications.
