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  • Is it possible to supply voltage to the Base-Emitter in reverse? 
    • For NPN transistors, VCEO is in breakdown when positive voltage is supplied to the Collector pin while the Emitter is grounded. Conversely, VCEO in PNP transistors is in breakdown when positive voltage is supplied to the Emitter with Collector grounded.
      Breakdown in the opposite direction (e.g. NPN: +V to Emitter, Collector grounded) is roughly equivalent to the breakdown between the Emitter and Base. Typically this is between 5 to 7V, making the Collector-Emitter reverse voltage less than 5V. (If sufficient voltage is supplied to the Collector-Emitter in reverse, deterioration such as low hFE will occur. Otherwise leakage current will flow.)





      The same applies to digital transistors. Voltages up to 5V can be supplied to the Collector-Emitter in the reverse direction as below. However, current flows through what has resistance between an GND terminal and a IN terminal.
    • Products: General Purpose Bipolar Transistors , Complex Transistors , Darlington Transistors
  • Why are most of the products halogen-free?
    • Although we have been using molded resins containing brominated flame retardants that comply with the RoHS Directive, in order to further reduce environmental impact we will continue to adopt halogen-free resin.
      ROHM defines halogen-free as (in homogeneous material):
      1) Chlorine 900ppm or less
      2) Bromine 900ppm or less
      3) Total concentrations of chlorine and bromine 1500ppms or less
      4) Antimony trioxide 1000ppms or less
      These specifications comply with the requirements of IEC61249 and are intended to satisfy the stringent environmental management demands of European manufacturers.
    • Products: Bipolar Transistors , MOSFETs
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