Models
- RBLQ30NL10S SPICE Model
RBLQ30NL10S (New)
Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD
RBLQ30NL10S
RBLQ30NL10S (New)
Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD
The RBLQ30NL10S is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Data Sheet
Sample
Product Detail
Specifications:
Configuration
Single
Package Code
TO-263L
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
30
IFSM[A]
200
Forward Voltage VF(Max.)[V]
0.86
IF @ Forward Voltage [A]
30
Reverse Current IR(Max.)[mA]
0.15
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
10.1x15.1 (t=4.7)
Features:
- High reliability
- Power mold type
- Low VF and low IR
- Low capacitance
