Trench MOS Structure, 100V, 2A, PMDE, Highly Efficient SBD for Automotive - RBLQ2VWM10TF (Under Development)
The RBLQ2VWM10TF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
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Specifications:
Grade
Automotive
Common Standard
AEC-Q101 (Automotive Grade)
Configuration
Single
Package Size[mm]
1.3x2.5 (t=0.95)
Mounting Style
Surface mount
Number of terminal
2
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
2.0
IFSM[A]
30.0
Forward Voltage VF(Max.)[V]
0.77
IF @ Forward Voltage [A]
2.0
Reverse Current IR(Max.)[mA]
0.01
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
- High reliability
- Small power mold type
- Low VF and low IR