RBLQ2VWM10TF (Under Development)
Trench MOS Structure, 100V, 2A, PMDE, Highly Efficient SBD for Automotive
RBLQ2VWM10TF
RBLQ2VWM10TF (Under Development)
Trench MOS Structure, 100V, 2A, PMDE, Highly Efficient SBD for Automotive
The RBLQ2VWM10TF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Data Sheet
Sample
Product Detail
Part Number | RBLQ2VWM10TFTR
Status |
Under Development
Package |
PMDE
Unit Quantity | 3000
Minimum Package Quantity | 3000
Packing Type | Taping
RoHS |
Yes
Specifications:
Grade
Automotive
Common Standard
AEC-Q101 (Automotive Grade)
Configuration
Single
Package Size [mm]
1.3x2.5 (t=1)
Mounting Style
Surface mount
Number of terminal
2
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
2.0
IFSM[A]
30.0
Forward Voltage VF(Max.)[V]
0.77
IF @ Forward Voltage [A]
2.0
Reverse Current IR(Max.)[mA]
0.01
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Features:
- High reliability
- Small power mold type
- Low VF and low IR
