RBLQ2VWM10TF (Under Development)
Trench MOS Structure, 100V, 2A, PMDE, Highly Efficient SBD for Automotive

The RBLQ2VWM10TF is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

Data Sheet Buy Sample
Data Sheet Buy Sample

Product Detail

 
Part Number | RBLQ2VWM10TFTR
Package | PMDE
Unit Quantity | 3000
Minimum Package Quantity | 3000
Packing Type | Taping
RoHS | Yes

Specifications:

Grade

Automotive

Common Standard

AEC-Q101 (Automotive Grade)

Configuration

Single

Package Size [mm]

1.3x2.5 (t=1)

Mounting Style

Surface mount

Number of terminal

2

VRM[V]

100

Reverse Voltage VR[V]

100

Average Rectified Forward Current IO[A]

2.0

IFSM[A]

30.0

Forward Voltage VF(Max.)[V]

0.77

IF @ Forward Voltage [A]

2.0

Reverse Current IR(Max.)[mA]

0.01

VR @ Reverse Current[V]

100

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

175

Features:

  • High reliability
  • Small power mold type
  • Low VF and low IR
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