RBLQ2VWM10
Trench MOS Structure, 100V, 2A, PMDE, Highly Efficient SBD
RBLQ2VWM10
RBLQ2VWM10
Trench MOS Structure, 100V, 2A, PMDE, Highly Efficient SBD
The RBLQ2VWM10 is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Data Sheet
Sample
Product Detail
Part Number | RBLQ2VWM10TR
Status |
Recommended
Package |
PMDE
Unit Quantity | 3000
Minimum Package Quantity | 3000
Packing Type | Taping
RoHS |
Yes
Specifications:
Configuration
Single
Mounting Style
Surface mount
Number of terminal
2
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
2
IFSM[A]
30
Forward Voltage VF(Max.)[V]
0.77
IF @ Forward Voltage [A]
2
Reverse Current IR(Max.)[mA]
0.01
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
1.3x2.5 (t=1)
Features:
- High reliability
- Small power mold type
- Low VF and low IR
