RBLQ20NL10C (New)
Trench MOS Structure, 100V, 20A, TO-263L, Highly Efficient SBD

The RBLQ20NL10C is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.

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* This is a standard-grade product.
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Product Detail

 
Part Number | RBLQ20NL10CTL
Status | Active
Package | LPDL
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS | Yes

Specifications:

Configuration

C-Common

Package Code

TO-263L

Number of terminal

3

VRM[V]

100

Reverse Voltage VR[V]

100

Average Rectified Forward Current IO[A]

20

IFSM[A]

150

Forward Voltage VF(Max.)[V]

0.71

IF @ Forward Voltage [A]

10

Reverse Current IR(Max.)[mA]

0.07

VR @ Reverse Current[V]

100

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Package Size [mm]

10.1x15.1 (t=4.7)

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Features:

  • High reliability
  • Power mold type
  • Cathode common dual type
  • Low VF and low IR
  • Low capacitance