Trench MOS Structure, 100V, 20A, TO-263AB, Highly efficient SBD - RBLQ20NB10C (Under Development)
The RBLQ20NB10C is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications. Cathode common dual type.
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Specifications:
Grade
Standard
Configuration
C-Common
Package Code
TO-263AB
Package Size[mm]
15.1x10.1(t=4.7)
Mounting Style
Leaded type
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
20.0
IFSM[A]
150.0
Forward Voltage VF(Max.)[V]
0.71
IF @ Forward Voltage [A]
10.0
Reverse Current IR(Max.)[mA]
0.07
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Features:
- High reliability
- Power mold type
- Cathode common dual type
- Low VF and Low IR