RBLQ20NB10C
Trench MOS Structure, 100V, 20A, TO-263AB, Highly efficient SBD

The RBLQ20NB10C is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications. Cathode common dual type.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.
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Product Detail

 
Part Number | RBLQ20NB10CTL
Status | Recommended
Package | LPDL
Unit Quantity | 1000
Minimum Package Quantity | 1000
Packing Type | Taping
RoHS | Yes

Specifications:

Grade

Standard

Configuration

C-Common

Package Code

TO-263AB

Package Size [mm]

10.1x15.1 (t=4.7)

Mounting Style

Leaded type

Number of terminal

3

VRM[V]

100

Reverse Voltage VR[V]

100

Average Rectified Forward Current IO[A]

20.0

IFSM[A]

150.0

Forward Voltage VF(Max.)[V]

0.71

IF @ Forward Voltage [A]

10.0

Reverse Current IR(Max.)[mA]

0.07

VR @ Reverse Current[V]

100

Storage Temperature (Min.)[°C]

-55

Storage Temperature (Max.)[°C]

150

Features:

  • High reliability
  • Power mold type
  • Cathode common dual type
  • Low VF and Low IR
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