RBLQ20BM10FH
Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive
RBLQ20BM10FH
RBLQ20BM10FH
Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD for Automotive
The RBLQ20BM10FH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Data Sheet
Sample
Product Detail
Part Number | RBLQ20BM10FHTL
Status |
Recommended
Package |
TO-252
Unit Quantity | 2500
Minimum Package Quantity | 2500
Packing Type | Taping
RoHS |
Yes
Specifications:
Configuration
Single
Package Code
TO-252 (DPAK)
Package(JEITA)
SC-63
Mounting Style
Surface mount
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
20
IFSM[A]
150
Forward Voltage VF(Max.)[V]
0.86
IF @ Forward Voltage [A]
20
Reverse Current IR(Max.)[mA]
0.08
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
6.6x10 (t=2.3)
Common Standard
AEC-Q101 (Automotive Grade)
Features:
- High reliability
- Power mold type
- Low VF and low IR
