RBLQ20BGE10
Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD
RBLQ20BGE10
RBLQ20BGE10
Trench MOS Structure, 100V, 20A, TO-252, Highly Efficient SBD
The RBLQ20BGE10 is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Data Sheet
Buy
*
Sample
*
* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Part Number | RBLQ20BGE10TL
Status |
Recommended
Package |
TO-252
Unit Quantity | 2500
Minimum Package Quantity | 2500
Packing Type | Taping
RoHS |
Yes
Specifications:
Configuration
Single
Package Code
TO-252 (DPAK)
Package(JEITA)
SC-63
Mounting Style
Surface mount
Number of terminal
3
VRM[V]
100
Reverse Voltage VR[V]
100
Average Rectified Forward Current IO[A]
20
IFSM[A]
150
Forward Voltage VF(Max.)[V]
0.86
IF @ Forward Voltage [A]
20
Reverse Current IR(Max.)[mA]
0.08
VR @ Reverse Current[V]
100
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
6.6x10 (t=2.4)
Features:
- High reliability
- Power mold type
- Low VF and low IR
