RUltra-Low IR Schottky Barrier Diodes Prevent Thermal Runaway at High Temperatures Reduces power consumption in automotive and power supply devices by approximately 40% | ROHM Semiconductor - ROHM Co., Ltd.
RUltra-Low IR Schottky Barrier Diodes Prevent Thermal Runaway at High Temperatures
Reduces power consumption in automotive and power supply devices by approximately 40%
ROHM has recently announced the development of the RBxx8 series of ultra-low IR Schottky barrier diodes capable of operating at high temperatures, enabling support for automotive and power supply devices. Power consumption is reduced by approximately 40% compared to conventional automotive rectifier diodes, making them ideal for energy-saving circuits in electric vehicles (EVs) and hybrid electric vehicles (HEVs).
Rectifier and fast recovery diodes (FRDs) are commonly used in circuits for automotive and power supplies exposed to high temperature environments due their strength against thermal runaway. However, they often feature high VF, making it difficult to reduce power consumption to the levels required for EVs and HEVs. As a result, there has been an increasing demand for low-VF Schottky barrier diodes that can support operation at high temperatures.
In response to this, ROHM has utilized high temperature-resistant metals to achieve the industry's lowest IR – approximately 100 times smaller than that of conventional SBDs, ensuring compatibility with high temperature environments.
This makes it possible to replace rectifier and fast recovery diodes with RBxx8 series SBDs, resulting in significantly improved VF characteristics (40% lower) and less heat generation, enabling smaller parts to be used – an important consideration for EVs and HEVs that demand increasing miniaturization.
Pricing: Varies (50-200 yen/unit sample price)
・40% lower switching loss than conventional products
VF is approximately 40% lower compared to automotive FRDs, reducing power consumption considerably.
・Compact, space-saving package
・No thermal runaway at high temperatures
Schottky Barrier Diode (SBD)
A diode that utilizes the rectifying properties (diode characteristics) of a Schottky junction, in which a metal and a semiconductor are placed in contact with each other. This type of diode features low forward voltage drop and high-speed switching, making it commonly used in switching power supplies.
Fast Recovery Diode (FRD)
This type of diode features a fast recovery time that mitigates reverse current, which is generated when switching the voltage from forward to reverse.
VF ( Forward Voltage)
The voltage drop that occurs in the diode when a forward current flows. The lower the forward voltage, the less the power consumption.
A current that flows in the reverse direction when a reverse voltage is applied. The lower the reverse current, the less the power consumption.
A condition in which reverse loss exceeds heat dissipation, resulting in a further increase in loss and an exponential rise in temperature.