1.5V Drive Nch+Pch MOSFET - US6M11

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.

Part Number	Status	Package	Unit Quantity	Minimum Package Quantity	Packing Type	RoHS
US6M11TR	Active	TUMT6	3000	3000	Taping	Yes

Specifications:

Grade	Standard
Package Code	SOT-363T
JEITA Package	SC-113DA
Package Size[mm]	2.0x2.1(t=0.85max.)
Number of terminal	6
Polarity	Nch+Pch
Drain-Source Voltage VDSS[V]	20
Drain Current ID[A]	1.5
RDS(on)[Ω] VGS=1.5V (Typ.)	0.3
RDS(on)[Ω] VGS=2.5V (Typ.)	0.17
RDS(on)[Ω] VGS=Drive (Typ.)	0.3
Total gate charge Qg[nC]	1.8
Power Dissipation (PD)[W]	1.0
Drive Voltage[V]	1.5
Mounting Style	Surface mount
Storage Temperature (Min.)[°C]	-55
Storage Temperature (Max.)[°C]	150

Features:

· Low voltage(1.5V) drive type
· Nch+Pch Middle-power MOSFET
· Small Surface Mount Package
· Pb Free/RoHS Compliant

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