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4V Drive Nch+SBD MOSFET - US5U2

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
US5U2TR Active TUMT5 3000 3000 Taping Yes
 
Specifications:
Grade Standard
Package Code SOT-353T
JEITA Package SC-113CA
Package Size[mm] 2.0x2.1(t=0.85Max.)
Number of terminal 5
Polarity Nch+Schottky
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 1.4
RDS(on)[Ω] VGS=4V (Typ.) 0.27
RDS(on)[Ω] VGS=4.5V (Typ.) 0.25
RDS(on)[Ω] VGS=10V (Typ.) 0.17
RDS(on)[Ω] VGS=Drive (Typ.) 0.27
Total gate charge Qg[nC] 1.4
Power Dissipation (PD)[W] 0.7
Drive Voltage[V] 4.0
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.5
Forward Current Surge Peak IFSM (Diode) [A] 2.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • · Multiple Schottky Barrier Diodes Middle Power MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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Technical Data
NE Handbook Series

For Power Device

Condition Of Soldering

For Surface Mount Type

Taping Specifications

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Storage Conditions

For Transistors

Part Explanation

For Transistors