2.5V Drive Nch+SBD MOSFET - US5U1

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
US5U1TR Active TUMT5 3000 3000 Taping inquiry Yes
Grade Standard
Package Code SOT-353T
JEITA Package SC-113CA
Package Size[mm] 2.0x2.1(t=0.85Max.)
Number of terminal 5
Polarity Nch+Schottky
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 1.5
RDS(on)[Ω] VGS=2.5V (Typ.) 0.24
RDS(on)[Ω] VGS=4V (Typ.) 0.18
RDS(on)[Ω] VGS=4.5V (Typ.) 0.17
RDS(on)[Ω] VGS=Drive (Typ.) 0.24
Total gate charge Qg[nC] 1.6
Power Dissipation (PD)[W] 0.7
Drive Voltage[V] 2.5
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.5
Forward Current Surge Peak IFSM (Diode) [A] 2.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
  • · Multiple Schottky Barrier Diodes Middle Power MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors