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Not Recommended For New Design
NPN Low VCE(sat) Transistor + Schottky Barrier Diode - US5L12 |
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Recommended Products
| N/A |
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Specifications:
| Part Number | US5L12TR |
| Status | NRND |
| Package | TUMT5 |
| Unit Quantity | 3000 |
| Minimum Package Quantity | 3000 |
| Packing Type | Taping |
| Constitution Materials List | inquiry |
| RoHS | Yes |
| Grade | Standard |
| Package Code | SOT-353T |
| JEITA Package | SC-113CA |
| Package Size[mm] | 2.0x2.1(t=0.85Max.) |
| Number of terminal | 5 |
| Polarity | NPN+Di |
| Collector-Emitter voltage VCEO1[V] | 30.0 |
| Collector current(continuous) IC1[A] | 1.0 |
| Collector Power dissipation PC[W] | 0.4 |
| hFE | 270 to 680 |
| hFE (Min.) | 270 |
| hFE (Max.) | 680 |
| hFE (Diode) | 25 |
| Reverse voltage VR (Diode) [V] | 20.0 |
| Forward Current IF (Diode) [A] | 0.7 |
| Forward Current Surge Peak IFSM (Diode) [A] | 3.0 |
| Mounting Style | Surface mount |
| Equivalent (Single Part) | 2SB1689 / RB461F |
| Storage Temperature (Min.)[°C] | -40 |
| Storage Temperature (Max.)[°C] | 125 |
Pin Configuration:
 |
Technical Data
NE Handbook Series
For Power Device
Condition Of Soldering
For Surface Mount Type
Operation Notes
About TR Die Temperature
Operation Notes
Before using ROHM Transistor
Part Explanation
For Transistors