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Not Recommended For New Design

NPN Low VCE(sat) Transistor + Schottky Barrier Diode - US5L12

 
Recommended Products
N/A
 
 
Specifications:
Part Number US5L12TR
Status NRND
Package TUMT5
Unit Quantity 3000
Minimum Package Quantity 3000
Packing Type Taping
Constitution Materials List inquiry
RoHS Yes
Grade Standard
Package Code SOT-353T
JEITA Package SC-113CA
Package Size[mm] 2.0x2.1(t=0.85Max.)
Number of terminal 5
Polarity NPN+Di
Collector-Emitter voltage VCEO1[V] 30.0
Collector current(continuous) IC1[A] 1.0
Collector Power dissipation PC[W] 0.4
hFE 270 to 680
hFE (Min.) 270
hFE (Max.) 680
hFE (Diode) 25
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 0.7
Forward Current Surge Peak IFSM (Diode) [A] 3.0
Mounting Style Surface mount
Equivalent (Single Part) 2SB1689 / RB461F
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Pin Configuration:
Pin Configration
 
 
Technical Data
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Part Explanation

For Transistors