Not Recommended for New Designs
US5L10
NPN Low VCE(sat) Transistor + Schottky Barrier Diode
US5L10
Not Recommended for New Designs
US5L10
NPN Low VCE(sat) Transistor + Schottky Barrier Diode
This product cannot be used for new designs (Not recommended for design diversion).
Product Detail
Part Number | US5L10TR
Status |
Not Recommended for New Designs
Package |
TUMT5
Unit Quantity | 3000
Minimum Package Quantity | 3000
Packing Type | Taping
RoHS |
Yes
Specifications:
Package Code
SOT-353T
JEITA Package
SC-113CA
Number of terminal
5
Polarity
NPN+Di
Collector Power dissipation PC[W]
0.4
Collector-Emitter voltage VCEO1[V]
12
Collector current Io(Ic) [A]
1.5
hFE
270 to 680
hFE (Min.)
270
hFE (Max.)
680
hFE (Diode)
25
Reverse voltage VR (Diode) [V]
20
Forward Current IF (Diode) [A]
0.7
Forward Current Surge Peak IFSM (Diode) [A]
3
Mounting Style
Surface mount
Equivalent (Single Part)
2SD2652 / RB461F
Storage Temperature (Min.)[°C]
-40
Storage Temperature (Max.)[°C]
125
Package Size [mm]
2x2.1 (t=0.85)
Features:
· Compact complex bipolar power transistor· For DC-DC converter
· Small Surface Mount Package
· Pb Free/RoHS Compliant
