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1.5V Drive Pch+SBD MOSFET - TT8U1

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
TT8U1TR Active TSST8 3000 3000 Taping Yes
 
Specifications:
Grade Standard
Package Code TSST8
Package Size[mm] 3.0x1.9(t=0.8)
Number of terminal 8
Polarity Pch+Schottky
Drain-Source Voltage VDSS[V] -20
Drain Current ID[A] -2.4
RDS(on)[Ω] VGS=1.5V (Typ.) 0.18
RDS(on)[Ω] VGS=2.5V (Typ.) 0.105
RDS(on)[Ω] VGS=4.5V (Typ.) 0.08
RDS(on)[Ω] VGS=Drive (Typ.) 0.18
Total gate charge Qg[nC] 6.7
Power Dissipation (PD)[W] 1.0
Drive Voltage[V] -1.5
Reverse voltage VR (Diode) [V] 20.0
Forward Current IF (Diode) [A] 1.0
Forward Current Surge Peak IFSM (Diode) [A] 3.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • · Multiple Schottky Barrier Diodes Middle Power MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
 
 
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors