4V Drive Pch+Pch MOSFET - TT8J2

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Unit Quantity
Minimum Package Quantity
Packing Type
TT8J2TR Active TSST8 3000 3000 Taping Yes
Grade Standard
Package Code TSST8
Package Size[mm] 3.0x1.9(t=0.8)
Applications Power Supply
Number of terminal 8
Polarity Pch+Pch
Drain-Source Voltage VDSS[V] -30
Drain Current ID[A] -2.5
RDS(on)[Ω] VGS=4V (Typ.) 0.115
RDS(on)[Ω] VGS=4.5V (Typ.) 0.095
RDS(on)[Ω] VGS=10V (Typ.) 0.06
RDS(on)[Ω] VGS=Drive (Typ.) 0.115
Total gate charge Qg[nC] 4.8
Power Dissipation (PD)[W] 1.25
Drive Voltage[V] -4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
  • · 4V-drive type
    · Pch+Pch Middle-power MOSFET
    · Fast Switching Speed
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
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New Products:
Technical Data
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors