-30V Pch+Pch Power MOSFET - SH8J66

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Please contact us for purchase because there is no distribution Inventory.--- inquiry
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Unit Quantity
Minimum Package Quantity
Packing Type
SH8J66TB1 Active SOP8 2500 2500 Taping Yes
Grade Standard
Package Code SOP8
Package Size[mm] 5.0x6.0(t=1.75)
Applications Power Supply
Number of terminal 8
Polarity Pch+Pch
Drain-Source Voltage VDSS[V] -30
Drain Current ID[A] 9.0
RDS(on)[Ω] VGS=4V (Typ.) 0.019
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0175
RDS(on)[Ω] VGS=10V (Typ.) 0.0135
RDS(on)[Ω] VGS=Drive (Typ.) 0.019
Total gate charge Qg[nC] 35.0
Power Dissipation (PD)[W] 2.0
Drive Voltage[V] -4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
  • · 4V-drive type
    · Pch+Pch Middle-power MOSFET
    · Fast Switching Speed
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
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Technical Data
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors