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N-channel Silicon Carbide Power MOSFET - SCT3080AL (New)

650V 30A N-channel SiC (Silicon Carbide) power MOSFET.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
SCT3080ALGC11 Active TO-247N 450 30 Tube Yes
 
Specifications:
Drain-source Voltage[V] 650
Drain-source On-state Resistance(Typ.)[mΩ] 80
Drain Current[A] 30.0
Total Power Dissipation[W] 134
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
  • ・ Low on-resistance
    ・ Fast switching speed
    ・ Fast reverse recovery
    ・ Easy to parallel
    ・ Simple to drive
    ・ Pb-free lead plating ; RoHS compliant
 
 
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ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET